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The application of pressure to elemental bismuth reduces itsconduction-valence band overlap, and results in a semimetal-semiconductor(SMSC) transition around 25 kbar. This transition is nominally of thetopological "Lifshitz" Fermi surface variety, but there are open questionsabout the role of interactions at low charge densities. Using a novel pressurecell with optical access, we have performed an extensive study of bismuth'sinfrared conductivity under pressure. In contrast to the expected pure bandbehavior we find signatures of enhanced interaction effects, including stronglycoupled charge-plasmon (plasmaron) features and a plasma frequency that remainsfinite up to the transition. These effect are inconsistent with a pure Lifshitzbandlike transition. We postulate that interactions play a central role indriving the transition.

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition