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We developed a novel method for obtaining the distribution of trappedcarriers over their degree of localization in organic transistors, based on thefine analysis of electron spin resonance spectra at low enough temperatureswhere all carriers are localized. To apply the method to pentacene thin-filmtransistors, we proved through continuous wave saturation experiments that allcarriers are localized at below 50 K. We analyzed the spectra at 20 K and foundthat the major groups of traps comprise localized states having wave functionsspanning around 1.5 and 5 molecules and a continuous distribution of stateswith spatial extent in the range between 6 and 20 molecules.

Distribution of Localized States from Fine Analysis of Electron Spin Resonance Spectra in Organic Transistors