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Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogenintercalation. The hydrogen moves between the 6root3 reconstructed initialcarbon layer and the SiC substrate. The topmost Si atoms which for epitaxialgraphene are covalently bound to this buffer layer, are now saturated byhydrogen bonds. The buffer layer is turned into a quasi-free standing graphenemonolayer with its typical linear pi-bands. Similarly, epitaxial monolayergraphene turns into a decoupled bilayer. The intercalation is stable in air andcan be reversed by annealing to around 900 degrees Celsius.

Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation