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Caviglia et al. [Nature (London) 456, 624 (2008)] have found that thesuperconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A centralissue is to determine the principal effect of the applied electric field. Usingmagnetotransport studies of a gated structure, we find that the mobilityvariation is almost five times as large as the sheet carrier density.Furthermore, superconductivity can be suppressed at both positive and negativegate bias. These results indicate that the relative disorder strength stronglyincreases across the superconductor-insulator transition.

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface