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We report the influence of the field effect on the dc resistance and Hallcoefficient in the strain-induced Mott insulating state of an organicsuperconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeysthe formula for activated transport $\sigma_{\Box} =\sigma_{0}\exp(-W/k_{B}T)$, where $\sigma_{0}$ is a constant and $W$ depends onthe gate voltage. The gate voltage dependence of the Hall coefficient showsthat, unlike in conventional FETs, the effective mobility of dense holecarriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gatevoltage. This implies that carrier doping involves delocalization of intrinsiccarriers that were initially localized due to electron correlation.

Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor