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We report on the observation of terahertz radiation induced photogalvaniccurrents in semiconductor heterostructures with one-dimensional lateralperiodic potential. The potential is produced by etching a grating into thesample surface. The electric current response is well described byphenomenological theory including both the circular and linear photogalvaniceffects. Experimental data demonstrate that the inversion asymmetry of theperiodic lateral pattern can be varied by means of electron beam lithography toproduce classical lateral ratchets. A novel microscopical mechanism for thepolarization-dependent photogalvanic effects has been proposed to interpret theexperimental findings. The photocurrent generation is based on the combinedaction of the lateral periodic potential and the modulated in-plane pumping.The latter modulation stems from near-field effects of the radiationpropagating through the grating.

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential