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We report on electrical measurements of the effective density of states inthe ferromagnetic semiconductor material (Ga,Mn)As. By analyzing theconductivity correction due to enhanced electron-electron interaction theelectrical diffusion constant was extracted for (Ga,Mn)As samples of differentdimensionality. Using the Einstein relation allows to deduce the effectivedensity of states of (Ga,Mn)As at the Fermi energy.

All electrical measurement of the density of states in (Ga,Mn)As