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We measured the local density of states of a quasi two-dimensional electronsystem (2DES) near defects, artificially created by Ar-ion sputtering, onsurfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunnelingspectroscopy (STS) in high magnetic fields. At valley energies of the Landaulevel spectrum, we found two typical localized distributions of the 2DESdepending on the defects. These are new types of distributions which are notobserved in the previous STS work at the HOPG surface near a point defect [Y.Niimi \textit{et al}., Phys. Rev. Lett. {\bf 97}, 236804 (2006).]. Withincreasing energy, we observed gradual transformation from the localizeddistributions to the extended ones as expected for the integer quantum Hallstate. We show that the defect potential depth is responsible for the twolocalized distributions from comparison with theoretical calculations.

Localized Distributions of Quasi Two-Dimensional Electronic States near Defects Artificially Created at Graphite Surfaces in Magnetic Fields