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Using a combination of ground state quantum Monte-Carlo and finite sizescaling techniques, we perform a systematic study of the effect of Coulombinteraction on the localisation length of a disordered two-dimensional electrongas. We find that correlations delocalise the 2D system. In the absence ofvalley degeneracy (as in GaAs heterostructures), this delocalization effectcorresponds to a finite increase of the localization length. The delocalisationis much more dramatic in the presence of valley degeneracy (as in Si MOSFETSs)where the localization length increases drastically. Our results suggest that arather simple mechanism can account for the main features of the metallicbehaviour observed in high mobility Si MOSFETs. Our findings support the claimthat this behaviour is indeed a genuine effect of the presence ofelectron-electron interactions, yet that the system is not a ``true'' metal inthe thermodynamic sense.

Do metals exist in two dimensions? A study of many-body localisation in low density electron gas