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The Mott relation between the electrical and thermoelectric transportcoefficients normally holds for phenomena involving scattering. However, theanomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbitinteraction. In this work, we have simultaneously measured AHE and theanomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films,and observed an exceptionally large ANE at zero magnetic field. We further showthat AHE and ANE share a common origin and demonstrate the validity of the Mottrelation for the anomalous transport phenomena.

Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors