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Graphene oxide (GO) flakes have been deposited to bridge the gap between twoepitaxial graphene electrodes to produce all-graphene devices. Electricalmeasurements indicate the presence of Schottky barriers (SB) at thegraphene/graphene oxide junctions, as a consequence of the band-gap in GO. Thebarrier height is found to be about 0.7 eV, and is reduced after annealing at180 $^\circ$C, implying that the gap can be tuned by changing the degree ofoxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs,rivaling silicon. {\it In situ} local oxidation of patterned epitaxial graphenehas been achieved.

The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics