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The metal insulator transition of nano-scaled $VO_2$ devices is drasticallydifferent from the smooth transport curves generally reported. The temperaturedriven transition occurs through a series of resistance jumps ranging over 2decades in amplitude, indicating that the transition is caused by avalanches.We find a power law distribution of the jump amplitudes, demonstrating aninherent property of the $VO_2$ films. We report a surprising relation betweenjump amplitude and device size. A percolation model captures the generaltransport behavior, but cannot account for the statistical behavior.

Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions