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We have studied temperature dependences of electron transport in graphene andits bilayer and found extremely low electron-phonon scattering rates that setthe fundamental limit on possible charge carrier mobilities at roomtemperature. Our measurements have shown that mobilities significantly higherthan 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. Asharp (threshold-like) increase in resistivity observed above approximately200K is unexpected but can qualitatively be understood within a model of arippled graphene sheet in which scattering occurs on intra-ripple flexuralphonons.

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer