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Spatio-temporal bifurcations and complex dynamics in globally coupledintrinsically bistable electrochemical systems with an S-shaped current-voltagecharacteristic under galvanostatic control are studied theoretically on aone-dimensional domain. The results are compared with the dynamics and thebifurcation scenarios occurring in a closely related model which describespattern formation in semiconductors. Under galvanostatic control both systemsare unstable with respect to the formation of stationary large amplitudecurrent domains. The current domains as well as the homogeneous steady stateexhibit oscillatory instabilities for slow dynamics of the potential dropacross the double layer, or across the semiconductor device, respectively. Theinterplay of the different instabilities leads to complex spatio-temporalbehavior. We find breathing current domains and chaotic spatio-temporaldynamics in the electrochemical system. Comparing these findings with theresults obtained earlier for the semiconductor system, we outline bifurcationscenarios leading to complex dynamics in globally coupled bistable systems withsubcritical spatial bifurcations.

Breathing current domains in globally coupled electrochemical systems: A comparison with a semiconductor model