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Electrochemical etching of silicon in hydrofluoride containing electrolytesleads to pore formation for low and to electropolishing for high appliedcurrent. The transition between pore formation and polishing is accompanied bya change of the valence of the electrochemical dissolution reaction. The localetching rate at the interface between the semiconductor and the electrolyte isdetermined by the local current density. We model the transport of reactantsand reaction products and thus the current density in both, the semiconductorand the electrolyte. Basic features of the chemical reaction at the interfaceare summarized in law of mass action type boundary conditions for the transportequations at the interface. We investigate the linear stability of a planar andflat interface. Upon increasing the current density the stability flips eitherthrough a change of the valence of the dissolution reaction or by a nonlinearboundary conditions at the interface.Comment: 18 pages, 8 figure

Porous silicon formation and electropolishing