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The development of single charge resolving, macroscopic silicon detectors hasopened a window into rare processes at the O(eV) scale. In order to reconstructthe energy of a given event, or model the charge signal obtained for a givenamount of energy absorbed by the electrons in a detector, an accurate chargeyield model is needed. In this paper we review existing measurements of chargeyield in Silicon, focusing in particular on the region below 1 keV. Wehighlight a calibration gap between 12-50 eV (referred to as the "UV-gap") andemploy a phenomenological model of impact ionization to explore the likelycharge yield in this energy regime. Finally, we explore the impact ofvariations in this model on a test case, that of dark matter scattering offelectrons, to illustrate the scientific impact of uncertainties in chargeyield.

Ionization Yield in Silicon for eV-Scale Electron-Recoil Processes