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In this work we study the evolution of intrinsic domain wallmagnetoresistance (DWMR) with domain wall confinement. Clean permalloy notchedhalf-ring nanocontacts are fabricated using a special ultra-high vacuumelectromigration procedure to tailor the size of the wire in-situ and throughthe resulting domain wall confinement we tailor the domain wall width from afew tens of nm down to a few nm. Through measurements of the dependence of theresistance with respect to the applied field direction we extract thecontribution of a single domain wall to the MR of the device, as a function ofthe domain wall width in the confining potential at the notch. In this sizerange, an intrinsic positive MR is found, which dominates over anisotropic MR,as confirmed by comparison to micromagnetic simulations. Moreover, the MR isfound to scale monotonically with the size of the domain wall, $\delta_{DW}$,as 1/$\delta_{DW}^b$, with $b=2.31\pm 0.39 $. The experimental result issupported by quantum-mechanical transport simulations based on ab-initiodensity functional theory calculations.

Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts