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We present low-temperature transport measurements of a gate-tunable thin filmtopological insulator system that features high mobility and low carrierdensity. Upon gate tuning to a regime around the charge neutrality point, weinfer an absence of strong localization even at conductivities well below$e^2/h$, where two dimensional electron systems should conventionally scale toan insulating state. Oddly, in this regime the localization coherence peaklacks conventional temperature broadening, though its tails do changedramatically with temperature. Using a model with electron-impurity scattering,we extract values for the disorder potential and the hybridization of the topand bottom surface states.

Absence of strong localization at low conductivity in the topological surface state of low disorder Sb2Te3