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The response of semiconductor materials to external magnetic fields is areliable approach to probe intrinsic electronic and spin-dependent properties.In this study, we investigate the common Zeeman splitting features of novelwurtzite materials, namely InP, InAs, and GaAs. We present values for theeffective g-factors of different energy bands and show that spin-orbit couplingeffects, responsible for the spin splittings, also have noticeablecontributions to the g-factors. Within the Landau level picture, we show thatthe nonlinear Zeeman splitting recently explained in magneto photoluminescenceexperiments for InP nanowires by Tedeschi et al. [Phys. Rev. B 99, 161204(2019)] are also present in InAs, GaAs and even in the conventional GaN. Suchnonlinear features stem from the peculiar coupling of the A and B valencebands, as a consequence of the interplay between the wurtzite crystal symmetryand the breaking of time-reversal symmetry by the external magnetic field.Moreover, we develop an analytical model to describe the experimental nonlinearZeeman splitting and apply it to InP and GaAs data. Extrapolating our fittedresults, we found that the Zeeman splitting of InP reaches a maximum value,which is a prediction that could be probed at higher magnetic fields.

Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials