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Silicon carbide (SiC)-based defects are promising for quantum communications,quantum information processing, and for the next generation of quantum sensors,as they feature long coherence times, frequencies near the telecom, and opticaland microwave transitions. For such applications, the efficient initializationof the spin state is necessary. We develop a theoretical description of thespin polarization process by using the intersystem crossing of the siliconvacancy defect, which is enabled by a combination of optical driving,spin-orbit coupling, and interaction with vibrational modes. By using distinctoptical drives, we analyze two spin polarization channels. Interestingly, wefind that different spin projections of the ground state manifold can bepolarized. This work helps to understand initialization and readout of thesilicon vacancy and explains some existing experiments with the silicon vacancycenter in SiC.

Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide