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An intrinsic electron injection model for linear band two-dimensional (2D)materials, like graphene, is presented and its coupling to a recently developedquantum time-dependent Monte Carlo simulator for electron devices, based on theuse of stochastic Bohmian conditional wave functions, is explained. Thesimulator is able to capture the full (DC, AC, transient and noise) performanceof 2D electron devices. In particular, we demonstrate that the injection ofelectrons with positive and negative kinetic energies is mandatory wheninvestigating high frequency performance of linear band materials with Kleintunneling, while traditional models dealing with holes (defined as the lack ofelectrons) can lead to unphysical results. We show that the number of injectedelectrons is bias-dependent, implying that an extra charge is required to getself-consistent results. Interestingly, we provide a successful comparison withexperimental DC data. Finally, we predict that a genuine high-frequencysignature due to a roughly constant electron injection rate in 2D linear bandelectron devices (which is missing in 2D parabolic band ones) can be used as aband structure tester.

Quantum time-dependent Monte Carlo simulation of electron devices with 2D linear-band materials: a genuine TeraHertz signature for graphene