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Diluted ferromagnetic semiconductors (DMSs) that combine the properties ofsemiconductors with ferromagnetism have potential application in spin-sensitiveelectronics (spintronics) devices. The search for DMS materials exploded afterthe observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, aseries of DMS compounds isostructural to iron-based superconductors have beenreported. Among them, the highest Curie temperature $T_C$ of 230 K has beenachieved in (Ba,K)(Zn,Mn)$_2$As$_2$. However, most DMSs, including (Ga,Mn)As,are p-type, i.e., the carriers that mediate ferromagnetism are holes. Forpractical applications, DMS with n-type carriers are also advantageous. Here wereport the successful synthesis of a II-II-V diluted ferromagneticsemiconductor with n-type carriers, Ba(Zn,Co)$_2$As$_2$. Magnetizationmeasurements show that the ferromagnetic transition occurs up to $T_{C} \sim$45 K. Hall effect and Seebeck effect measurements jointly confirm that thedominant carriers are electrons. Through muon spin relaxation ($\mu$SR), avolume sensitive magnetic probe, we have also confirmed that the ferromagnetismin Ba(Zn,Co)$_2$As$_2$ is intrinsic and the internal field is static.

Ba(Zn,Co)2As2: a II-II-V Diluted Ferromagnetic Semiconductor with N-type Carriers