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ZrSiS is a nodal-line semimetal, whose electronic band structure contains adiamond-shaped line of Dirac nodes. We carried out a comparative study on theoptical conductivity of ZrSiS and related compounds ZrSiSe, ZrSiTe, ZrGeS, andZrGeTe by reflectivity measurements over a broad frequency range combined withdensity functional theory calculations. The optical conductivity exhibits adistinct U shape, ending at a sharp peak at around 10000~cm$^{-1}$ for allstudied compounds, except for ZrSiTe. The U shape of the optical conductivityis due to transitions between the linearly dispersing bands crossing each otheralong the nodal line. The sharp high-energy peak is related to transitionsbetween almost parallel bands, and its energy position depends on theinterlayer bonding correlated with the $c$/$a$ ratio, which can be tuned byeither chemical or external pressure. For ZrSiTe, another pair of crossingbands appears in the vicinity of the Fermi level, corrugating the nodal-lineelectronic structure and leading to the observed difference in opticalconductivity. The findings suggest that the Dirac physics in Zr$XY$ compoundswith $X$=Si, Ge and $Y$=S, Se, Te is closely connected to the interlayerbonding.

Chemical pressure effect on the optical conductivity of the nodal-line semimetals ZrSi$Y$ ($Y$=S, Se, Te) and ZrGe$Y$ ($Y$=S, Te)