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Oxide heterostructures are versatile platforms with which to research andcreate novel functional nanostructures. We successfully develop one-dimensional(1D) quantum-wire devices using quantum point contacts on MgZnO/ZnOheterostructures and observe ballistic electron transport with conductancequantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements,we find that the g-factor is enhanced to around 6.8, more than three times thevalue in bulk ZnO. We show that the effective mass m^{*} increases as theelectron density decreases, resulting from the strong electron-electroninteractions. In this strongly interacting 1D system we study features matchingthe 0.7 conductance anomalies up to the fifth subband. This paper demonstratesthat high-mobility oxide heterostructures such as this can provide goodalternatives to conventional III-V semiconductors in spintronics and quantumcomputing as they do not have their unavoidable dephasing from nuclear spins.This paves a way for the development of qubits benefiting from the low defectsof an undoped heterostructure together with the long spin lifetimes achievablein silicon.

Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure