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We study the interlayer scattering mediated by long-range Coulomb interactionbetween electrons (density n) and holes (p) in a double-layer system. The gateddevice is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSbmiddle barrier such that the interlayer tunneling is negligibly small. By usingindependent-layer contacts we measure the transport tensor \r{ho}_xx and\r{ho}_xy that are solely from the InAs layer, while sweeping p in the InGaSblayer. We found a strongly enhanced resistive scattering signal as the carrierdensities approach a total charge neutrality, n = p, which cannot be describedby the Fermi-liquid theory. Results of data analysis for density, temperature,and magnetic field dependences are consistent with the emergence of excitoniccoupling between the two layers, stressing the dominance of Coulomb interactioneven in the presence of disorder.

Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier