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Finding a new class of materials supporting a long spin lifetime is essentialin development of energy-saving spintronics, which is achievable by using apersistent spin helix (PSH) materials. However, for spintronic devices, the PSHstates with large spin splitting is required for operation at room temperature.By employing first-principles calculations, we show that the PSH states withlarge spin splitting are achieved in the SnSe monolayer (ML) functionalized bya substitutional halogen impurity. We find the PSH states in the Fermi levelwhere k-space Fermi surface is characterized by the shifted two loops,dominated by out-of-plane spin orientations. We clarify the PSH states in termof an effective k.p Hamiltonian obtained from symmetry consideration. Finally,large spin-orbit strength in the PSH states with a substantially smallwavelength are found, rendering that this system is promising for thedevelopment of an efficient and high-density scalable spintronic devicesoperating at room temperatures.

Doping-induced persistent spin helix with large spin splitting in monolayer SnSe