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As a crucial part in thermal management, interfacial thermal transport is still not well understood. In this paper, we employ the newly developed modal nonequilibrium molecular dynamics to study the Si/Ge interfacial thermal transport and clarify several long-standing issues. We find that the few atomic layers at the interface are dominated by interfacial modes, which act as a bridge that connects the bulk Si and Ge modes. Such bridging effect boosts the inelastic transport to contribute more than 50% to the total thermal conductance even at room temperature. The apparent inelastic transport can even allow effective four-phonon processes across the interface when the mass difference between the two materials is large. Surprisingly, optical phonon modes can contribute equal or more thermal conductance than the acoustic modes due to the bridging effect. From the modal temperature analysis, we find that the phonon modes are in strong thermal nonequilibrium near the interface, which impedes the thermal transport. The widely used Landauer approach that does not consider the phonon nonequilibrium can lead to inaccurate results. We have modified the Landauer approach to include the inelastic transmission and modal thermal nonequilibrium. The approach is used to analyze our modal NEMD results, and the mode-dependent phonon transmission function that includes inelastic scattering has been derived. Our results unveil the fundamental thermal transport physics across interfaces and will shed light on the future engineering in thermal management. It provides a method of calculating modal phonon transmission functions that includes inelastic scattering from molecular dynamics.

Unexpected high inelastic phonon transport across solid-solid interface: Modal nonequilibrium molecular dynamics simulations and Landauer analysis