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Inter-band photo-excitation of electron states with the twisted photons inGaAs, a direct band-gap bulk semiconductor, is considered theoretically.Assuming linearity of the quantum transition amplitudes and applyingWigner-Eckart theorem, we derive a plane-wave expansion of twisted-photonamplitudes and obtain relative probabilities for magnetic sub-level populationof the photo-electrons in conduction band. The approach for calculating theposition dependent electron polarization, resulting from photo-absorption oftwisted light, is described for vertical transitions in the $\Gamma$ - point.Theoretical predictions for GaAs show the interplay of spin and orbital angularmomentum of the twisted photons that alters the magnitude and the sign ofphotoelectron polarization in the region near photon's phase singularity.

Spin Polarization of Photoelectrons in GaAs Excited by Twisted Photons