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The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced byproximity coupling. Here we report on the proximity-induced spin-orbit couplingin graphene transferred by hexagonal boron nitride (hBN) onto the topologicalinsulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ (BSTS) which was grown on ahBN substrate by vapor solid synthesis. Phase coherent transport measurements,revealing weak localization, allow us to extract the carrier density-dependentphase coherence length $l_\phi$. While $l_\phi$ increases with increasingcarrier density in the hBN/graphene/hBN reference sample, it decreases inBSTS/graphene due to the proximity-coupling of BSTS to graphene. The latterbehavior results from D'yakonov-Perel-type spin scattering in graphene with alarge proximity-induced spin-orbit coupling strength of at least 2.5 meV.

Proximity-Induced Spin-Orbit Coupling in Graphene-Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ Heterostructures