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Gray tin, also known as $\alpha$-Sn, can be turned into a three-dimensionaltopological insulator (3D-TI) by strain and finite size effects. Such roomtemperature 3D-TI is peculiarly interesting for spintronics due to thespin-momentum locking along the Dirac cone (linear dispersion) of the surfacestates. Angle resolved photoemission spectroscopy (ARPES) has been used toinvestigate the dispersion close to the Fermi level in thin (0\,0\,1)-orientedepitaxially strained films of $\alpha$-Sn, for different film thicknesses aswell as for different capping layers (Al, AlO$_x$ and MgO). Indeed a propercapping layer is necessary to be able to use $\alpha$-Sn surface states forspintronics applications. In contrast with free surfaces or surfaces coatedwith Ag, coating the $\alpha$-Sn surface with Al or AlO$_x$ leads to a drop ofthe Fermi level below the Dirac point, an important consequence for transportis the presence of bulk states at the Fermi level. $\alpha$-Sn films coated byAlO$_x$ are studied by electrical magnetotransport: despite clear evidence ofsurface states revealed by Shubnikov-de Haas oscillations, an important part ofthe magneto-transport properties is governed by "bulk" electronic statesattributed to the $\Gamma 8$ band, as suggested by {\it ab-initio}calculations.

ARPES and transport studies of the elemental topological insulator $\alpha$-Sn