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We study the coherent dynamics of localized excitons in 100-periods of 2.5 nmthick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured withspectroscopic resolution through two-pulse and three-pulse photon echoes at thetemperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the(In,Ga)N quantum wells: When the laser photon energy is tuned across the 43meV-wide inhomogeneously broadened resonance line, the coherence time T2 variesbetween 45 and 255 ps, increasing with stronger exciton localization. Thecorresponding narrow homogeneous linewidths ranging from 5.2 to 29 {\mu}eV aswell as the relatively weak exciton-phonon interaction (0.8 {\mu}eV/K) confirma strong, quantum dot-like exciton localization in a static disorderedpotential inside the (In,Ga)N quantum well layers.

Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells