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Spin-charge interconversion (SCI) phenomena have attracted a growing interestin the field of spintronics as means to detect spin currents or manipulate themagnetization of ferromagnets. The key ingredients to exploit these assets area large conversion efficiency, the scalability down to the nanometer scale andthe integrability with opto-electronic and spintronic devices. Here we showthat, when an ultrathin Bi film is epitaxially grown on top of a Ge(111)substrate, quantum size effects arising in nanometric Bi islands drasticallyboost the SCI efficiency, even at room temperature. Using x-ray diffraction(XRD), scanning tunneling microscopy (STM) and spin- and angle-resolvedphotoemission (S-ARPES) we obtain a clear picture of the film morphology,crystallography and electronic structure. We then exploit the Rashba-Edelsteineffect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantifythe SCI efficiency using optical and electrical spin injection.

Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films