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(Dated: August 3, 2018) The new method of numerical analysis of experimentalferromagnetic resonance (FMR) spectra in thin films is developed and applied to(Ga,Mn)As thin films. Specifically, it starts with the finding of numericalsolutions of Smit-Beljers (SB) equation and continues with their subsequentstatistical analysis within the cross-validation (CV) approach taken frommachine learning techniques. As a result of this treatment, we are able toreinterpret the available FMR experimental results in diluted ferromagneticsemiconductor (Ga,Mn)As thin films with the resulting determination ofmagnetocrystalline anisotropy constants. The outcome of CV analysis points outthat it is necessary to take into account terms describing the bulk cubicanisotropy up to the fourth order to reproduce FMR experimental results for(Ga,Mn)As correctly. This finding contradicts the wide-spread conviction in theliterature that only first order cubic anisotropy term is important in thismaterial. We also provide numerical values of these higher order cubicanisotropy constants for (Ga,Mn)As thin films resulting from SB-CV approach.

Ferromagnetic resonance in thin films - cross-validation analysis of numerical solutions of Smit-Beljers equation. Application to GaMnAs