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We study the competition of hole capture between an In(Ga)As quantum dot anda directly adjacent ionized impurity in view of spin-photon interfaces. TheKerr rotation noise spectroscopy at 4.2 K shows that the hole-captureprobability of the In(Ga)As quantum dot is about one order of magnitude highercompared to the hole-capture probability of the ionized impurity and suggeststhat a simultaneous occupation of quantum dot and impurity by a hole isefficiently suppressed due to Coulomb interaction. A theoretical model ofinterconnected spin and charge noise allows the quantitative specification ofall relevant time scales.

Hole-capture competition between a single quantum dot and an ionized acceptor