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The two-dimensional electron system in (110)Al$_2$O$_{3-\delta}$/SrTiO$_3$heterostructures displays anisotropic electronic transport. Largest and lowestconductivity and electron mobility $\mu$ are observed along the $[001]$ and$[1\bar{1}0]$ direction, respectively. The anisotropy of the sheet resistanceand $\mu$ likewise leads to a distinct anisotropic normal magnetotransport (MR)for T < 30K. However, at temperatures T<5K and magnetic field B<2T MR isdominated by weak antilocalization.Despite the rather strong anisotropy of theFermi surfaces, the in-plane anisotropic magnetoresistance (AMR) displaystwo-fold non-crystalline anisotropy. However, the AMR-amplitude is found to beanisotropic with respect to the current direction, leading to a 60% larger AMRamplitude for current I along the $[001]$ direction compared to I parallel to$[1\bar{1}0]$. Tight binding calulations evidence an anisotropic Rashba-inducedband splitting with dominant linear k-dependence. In combination withsemiclassical Boltzmann theory the non-crystalline AMR is well described,despite the anisotropic Fermi surface.

Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures