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Two-dimensional topological insulators and two-dimensional materials withferroelastic characteristics are intriguing materials and many examples havebeen reported both experimentally and theoretically. Here, we present thecombination of both features - a two-dimensional ferroelastic topologicalinsulator that simultaneously possesses ferroelastic and quantum spin Hallcharacteristics. Using first-principles calculations, we demonstrate Janussingle-layer MSSe (M=Mo, W) stable two-dimensional crystals that show thelong-sought ferroelastic topological insulator properties. The materialfeatures low switching barriers and strong ferroelastic signals, beneficial forapplications in nonvolatile memory devices. Moreover, their topological phasesharbor sizeable nontrivial band gaps, which supports the quantum spin Halleffect. The unique coexistence of excellent ferroelastic and quantum spin Hallphases in single-layer MSSe provides extraordinary platforms for realizingmulti-purpose and controllable devices.

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)