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We develop a temperature dependent theory for singlet exciton hoppingtransport in disordered semiconductors. It draws on the transport level conceptwithin a F\"orster transfer model and bridges the gap in describing thetransition from equilibrium to non-equilibrium time dependent spectraldiffusion. We test the validity range of the developed model using kineticMonte Carlo simulations and find agreement over a broad range of temperatures.It reproduces the scaling of the diffusion length and spectral shift with thedimensionless disorder parameter and describes in a unified manner thetransition from equilibrium to non-equilibrium transport regime. We find thatthe diffusion length in the non-equilibrium regime does not scale with the thethird power of the F\"orster radius. The developed theory provides a powerfultool for interpreting time-resolved and steady state spectroscopy experimentsin a variety of disordered materials, including organic semiconductors andcolloidal quantum dots.

Global Equilibrium and Non-Equilibrium Theory of Hopping Exciton Transport in Disordered Semiconductors