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Large non-saturating magnetoresistance has been observed in various materialsand electron-hole compensation has been regarded as one of the main mechanisms.Here we present a detailed study of the angle-dependent Shubnikov -de Haaseffect on large magnetoresistance material pyrite-type PtBi$_{2}$, which allowsus to experimentally reconstruct its Fermi-surface structure and extract thephysical properties of each pocket. We find its Fermi surface contains fourtypes of pockets in the Brillouin zone: three ellipsoid-like hole pockets$\alpha$ with C$_4$ symmetry located on the edges (M points), one intricateelectron pocket $\beta$ merged from four ellipsoids along [111] located on thecorners (R points), two smooth and cambered octahedrons $\gamma$ (electron) and$\delta$ (hole) on the center ($\Gamma$ point). The deduced carrier densitiesof electrons and holes from the volume of pockets prove carrier compensation.This compensation at low temperatures is also supported by fitting the fielddependence of Hall and magnetoresistance at different temperatures. We concludethat the compensation is the main mechanism for the large non-saturatingmagnetoresistance in pyrite-type PtBi$_{2}$. We found the hole pockets {\alpha}may contribute major mobility because of their light masses and anisotropy torelatively avoid large-angle scattering at low temperature. This may be acommon feature of semimetals with large magnetoresistance. The foundsub-quadratic magnetoresistance in high field is probably due tofield-dependent mobilities, another feature of semimetals under high magneticfields.

Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations