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To further investigate the interplay between ferromagnetism and topologicalinsulators, thin films of the low-carrier topological insulator(Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ were deposited on the insulating ferromagnet EuS(100) in situ. AC susceptibility indicates magnetic anomalies between$T\approx30~\mathrm{K}$ and $T\approx60~\mathrm{K}$, well above the Curietemperature $T_C \approx 15~\mathrm{K}$ of EuS. When the Fermi level is closeto the Dirac point and the surface state dominates the electric conduction,sharp increases in resistance with decreasing temperatures were observedconcurrently with the magnetic anomalies. Positive-negative magnetoresistancecrossovers were observed at the Curie temperature, which seem only to appearwhen the sheet resistance exceeds the Mott-Ioffe-Regel limit $h/e^2$. Atwo-stage gap-opening process due to magnetic proximity is proposed.

Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers