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We explore the nature of the electroluminescence (EL) emission of purelyn-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution withvoltage. A singular feature of such a device is unveiled when the electricaloutput current changes from high to low and the EL on-off ratio is enhanced by2 orders of magnitude compared to the current on-off ratio. By combining the ELand current properties, we are able to identify two independent impactionization channels associated with the coherent resonant tunneling current andthe incoherent valley current. We also perform the same investigation with anassociated series resistance, which induces a bistable electrical output in thesystem. By simulating a resistance variation for the current-voltage and theEL, we are able to tune the EL on-off ratio by up to 6 orders of magnitude. Wefurther observe that the EL on and off states can be either direct or invertedcompared to the tunneling current on and off states. This electroluminescence,combined with the unique RTD properties such as the negative differentialresistance (NDR) and high frequency operation, enables the development of highspeed functional opto-electronic devices and optical switches.

Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures