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11 The superconductor-insulator transition (SIT), one of the most fascinating 12 quantum phase transitions, is closely related to the competition between 13 superconductivity and carrier localization in disordered thin films. Here, 14 superconducting TiOx films with different oxygen contents were grown on Al2O3 15 substrates by a pulsed laser deposition technique. The increasing oxygen content leads 16 to an increase of disorder, a reduction of carrier density, an enhancement of carrier 17 localization, and therefore a decrease of superconducting transition temperature. A 18 fascinating SIT emerges in cubic TiOx films with increasing oxygen content and its 19 critical sheet resistance is close to the quantum resistance h/(2e) ~6.45 kΩ. The 20 scaling analyses of magnetic field-tuned SIT exhibit that the critical exponent 21 products zν increase from 1.02 to 1.31 with increasing disorder. Based on the results, 22 the SIT can be described by the “dirty boson” model, and a schematic phase diagram 23 for TiOx films was constructed. 24 Materials & Correspondence: Correspondence and requests for materials should be addressed to X.G.L. (email: lixg@ustc.edu.cn) or to Y.W.Y. (email: yyw@ustc.edu.cn). Fax/Tel: ++86-551-63603408. 2

Quantum superconductor-insulator transition in titanium monoxide thin films with a wide range of oxygen contents