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We present direct experimental evidences of Anderson localization induced bythe intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Ourapproach relies on the measurement of the luminescence spectrum under localinjection of electrons from a scanning tunneling microscope tip into anear-surface single quantum well. Fluctuations in the emission line shape areobserved on a few-nanometer scale. Narrow emission peaks characteristic ofsingle localized states are resolved. Calculations in the framework of thelocalization landscape theory provide the effective confining potential mapstemming from composition fluctuations. This theory explains well the observednanometer scale carrier localization and the energies of these Anderson-typelocalized states. The energy spreading of the emission from localized states isconsistent with the usually observed very broad photo- or electro-luminescencespectra of InGaN/GaN quantum well structures.

physical review. b./physical review. b

Evidence of nanoscale Anderson localization induced by intrinsic  compositional disorder in InGaN/GaN quantum wells by scanning tunneling  luminescence spectroscopy