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Lateral two-dimensional (2D) transitional metal dichalcogenide (TMD)heterostructures have recently attracted a wide attention as promisingmaterials for optoelectronic nanodevices. Due to the nanoscale width of lateralheterojunctions, the study of their optical properties is challenging andrequires using subwavelength optical characterization techniques. Weinvestigated the photoresponse of a lateral 2D WSe2/MoSe2 heterostructure usingtip-enhanced photoluminescence (TEPL) with nanoscale spatial resolution andwith picoscale tip-sample distance dependence. We demonstrate the observationof quantum plasmonic effects in 2D heterostructures on a non-metallicsubstrate, and we report the nano-optical measurements of the lateral 2D TMDheterojunction width of ~ 150 nm and the charge tunneling distance of ~ 20 pm.Controlling the plasmonic tip location allows for both nano-optical imaging andplasmon-induced hot electron injection into the heterostructure. By adjustingthe tip-sample distance, we demonstrated the controllability of thehot-electron injection via the competition of two quantum plasmonicphotoluminescence (PL) enhancement and quenching mechanisms. The directionalcharge transport in the depletion region leads to the increased hot electroninjection, enhancing the MoSe2 PL signal. The properties of the directionalhot-electron injection in the quantum plasmonic regime make the lateral 2DMoSe2/WSe2 heterostructures promising for quantum nanodevices with tunablephotoresponse.

Quantum plasmonic hot-electron injection in lateral WSe2/MoSe2 heterostructures