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We present a density functional theory parametrized hybrid k$\cdot$p tightbinding model for electronic properties of atomically thin films oftransition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use thismodel to analyze intersubband transitions in $p$- and $n$-doped $2{\rm H}-MX_2$films and predict the line shapes of the intersubband excitations, determinedby the subband-dependent two-dimensional electron and hole masses, as well asexcitation lifetimes due to emission and absorption of optical phonons. We findthat the intersubband spectra of atomically thin films of the 2H-${MX_2}$family with thicknesses of $N=2$ to $7$ layers densely cover the infraredspectral range of wavelengths between $2$ and $30\ {\rm \mu m}$. The detailedanalysis presented in this paper shows that for thin $n$-doped films, theelectronic dispersion and spin-valley degeneracy of the lowest-energy subbandsoscillate between odd and even number of layers, which may also offerinteresting opportunities for quantum Hall effect studies in these systems.

physical review. b./physical review. b

Hybrid k$\cdot$p tight-binding model for subbands and infrared  intersubband optics in few-layer films of transition-metal dichalcogenides:  MoS$_2$, MoSe$_2$, WS$_2$ and WSe${}_2$