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We put forward a tight-binding model for rhombohedral topological insulatorsmaterials with the space group $D^{5}_{3d}(R\bar{3}m)$. The model describes thebulk band structure of these materials over the whole Brillouin zone. Withinthis framework, we also describe the topological nature of surface states,characterized by a Dirac cone-like dispersion and the emergence of surfaceprojected bulk states near to the Dirac-point in energy. We find that thebreaking of the $R_{3}$ symmetry as one moves away from the $\Gamma$ point hasan important role in the hybridization of the $p_x$, $p_y$, and $p_z$ atomicorbitals. In our tight-binding model, the latter leads to a band mixing matrixelement ruled by a single parameter. We show that our model gives a gooddescription of the strategies/mechanisms proposed in the literature toeliminate and/or energy shift the bulk states away from the Dirac point, suchas stacking faults and the introduction of an external applied electric field.

A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone