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In spite of Anderson's theorem, disorder is known to affect superconductivityin conventional s-wave superconductors. In most superconductors, the degree ofdisorder is fixed during sample preparation. Here we report measurements of thesuperconducting properties of the two-dimensional gas that forms at theinterface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystalorientation, a system that permits \emph{in situ} tuning of carrier density anddisorder by means of a back gate voltage $V_g$. Like the (001) oriented LAO/STOinterface, superconductivity at the (111) LAO/STO interface can be tuned by$V_g$. In contrast to the (001) interface, superconductivity in these (111)samples is anisotropic, being different along different interface crystaldirections, consistent with the strong anisotropy already observed othertransport properties at the (111) LAO/STO interface. In addition, we find thatthe (111) interface samples "remember" the backgate voltage $V_F$ at which theyare cooled at temperatures near the superconducting transition temperature$T_c$, even if $V_g$ is subsequently changed at lower temperatures. The lowenergy scale and other characteristics of this memory effect ($<1$ K)distinguish it from charge-trapping effects previously observed in (001)interface samples.

Superconductivity and Frozen Electronic States at the (111) LaAlO$_3$/SrTiO$_3$ Interface