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Monobismuthides of yttrium and lutetium are shown as new representatives ofmaterials which exhibit extreme magnetoresistance and magnetic-field-inducedresistivity plateau. At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively. Our thorough examination of electron transportproperties of both compounds show that observed features are the consequence ofnearly perfect carrier compensation rather than of possible nontrivial topologyof electronic states. The field-induced plateau of electrical resistivity canbe explained with Kohler scaling. Anisotropic multi-band model of electronictransport describes very well the magnetic field dependence of electricalresistivity and Hall resistivity. Data obtained from the Shubnikov-de Haasoscillations analysis also confirm that Fermi surface of each compound containsalmost equal amounts of holes and electrons. First-principle calculations ofelectronic band structure are in a very good agreement with the experimentaldata.

Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation