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The electronic phase separation (EPS) of optimally doped La2/3Ca1/3MnO3(LCMO) thin films under various degrees of anisotropic strain is investigatedby static magnetotransport and dynamic relaxation measurements. Three LCMOfilms were grown simultaneously on (001) NdGaO3 (NGO) substrates by pulsedlaser deposition, and then post-growth annealed at 780 oC in O2 for differentdurations of time. With increasing annealing time, the films developedsignificant strains of opposite signs along the two orthogonal in-planedirections. The static temperature-dependent resistivity, R(T), was measuredsimultaneously along the two orthogonal directions. With increasing annealingtime, both zero-field-cooled and field-cooled R(T) show significant increases,suggesting strain-triggered EPS and appearance of antiferromagnetic insulating(AFI) phases in a ferromagnetic metallic (FMM) ground state. Meanwhile, R(T)along the tensile-strained [010] direction becomes progressively larger thanthat along the compressive-strained [100]. The enhanced resistivity anisotropyindicates that the EPS is characterized by phase-separated FMM entities with apreferred orientation along [100], possibly due to the cooperative deformationand rotation/tilting of the MnO6 octahedra under the enhanced anisotropicstrain. The anisotropic EPS can also be tuned by an external magnetic field.During a field-cycle at several fixed temperatures, the AFI phases are meltedat high fields and recovered at low fields, resulting in sharp resistancechanges of the ratio as high as 104. Furthermore, the resistivity was found toexhibit glass-like behavior, relaxing logarithmically in the phase-separatedstates. Fitting the data to a phenomenological model, the resulting resistiveviscosity and characteristic relaxation time are found to evolve withtemperature, showing a close correlation with the static measurements in theEPS states.

Static and Dynamic Signatures of Anisotropic Electronic Phase Separation in La2/3Ca1/3MnO3 Thin Films under Anisotropic Strain