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We investigate electronic transport through a graphene $n$-$p$ junction inthe quantum Hall effect regime at high perpendicular magnetic field, when thefilling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2respectively. We compute numerically the conductance $G$, the noise $Q$ and theFano factor $F$ of the junction when inelastic effects are included along theinterface in a phenomenological way, by means of fictitious voltage probes.Using a scaling approach, we extract the system coherence length $L_\phi$ anddescribe the full crossover between the coherent limit ($W\ll L_\phi$) and theincoherent limit ($W\gg L_\phi$), $W$ being the interface length. While $G$saturates at the value $e^2/h$ in the incoherent regime, $Q$ and $F$ are foundto vanish exponentially for large length $W$. Corrections due to disorder arealso investigated. Our results are finally compared to available experimentaldata.

Graphene $n$-$p$ junctions in the Quantum Hall regime: numerical study of incoherent scattering effects