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Evolution of electronic inhomogeneities with back-gate voltage in graphene onSiO$_2$ was studied using room temperature scanning tunneling microscopy andspectroscopy. The reversal of local contrast in some places in the STS maps andsharp changes in cross-correlations between topographic and conductance maps,when graphene Fermi energy approaches its Dirac point, are attributed to changein charge-state of interface defects. The spatial correlations in theconductance maps, described by two different length scales and their growthduring approach to Dirac point, show a qualitative agreement with thepredictions of the screening theory of graphene. Thus a sharp change in the twolength-scales close to the Dirac point, seen in our experiments, is interpretedin terms of the change in charge state of some of the interface defects. Asystematic understanding and control of the charge state of defects will helpin memory applications of graphene.

STM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects